IGGCAS OpenIR  > 地球与行星物理院重点实验室
Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure
Liu, Jie1; Li, Jingwei2,3; Gu, Lixin4,5; Wu, Hong6,7; Han, Guang8; Wang, Dengkui9; Zhou, Jinfei2,3; Gong, Xiangnan1; Yang, Dingfeng10; Zheng, Sikang6,7; Zhang, Daliang2,3; Zhang, Bin1; Zhou, Xiaoyuan1,6,7
2022-06-01
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume586Pages:7
AbstractGallium selenides (GaSe and Ga2Se3) and their heterostructures have been widely concerned owing to their attractive properties and potential applications in the field of photoelectric and photocatalysis. In this work, we develop an unprecedented Ga2Se3/GaSe self-assembled heterostructure through thermal oxidation of GaSe. The crystal structure and defects of GaSe and Ga2Se3/GaSe heterostructure have been studied by advanced Cs-STEM imaging. The present bulk GaSe possesses epsilon-polytype as the dominant phase along with gamma-GaSe inclusions and structural defects, i.e., stacking faults, twins, and antisites. The Ga2Se3 layer, generated on the GaSe oxidized surface, exhibits a defective zincblende-like cubic structure where vacancies locally ordered on the {1 1 1} planes, which even results in superstructure domains. Furthermore, atomically van der Waals epitaxy and orientation relationships between Ga2Se3 and GaSe were revealed. Finally, the optical properties of Ga2Se3/GaSe hetero-structures were preliminary studied and future directions for the structural development and property investigation of Ga2Se3/GaSe heterostructures were also discussed. These findings are insightful for recognizing the microscopic structure of Ga(S)e and Ga2Se3/GaSe heterostructures and provide a valuable route for the generation of self-assembled heterostructures in other related layered semiconductors.
KeywordGaSe bulk crystal & nbsp GaSe oxidized surface Ga2Se3/GaSe heterostructure Atomic imaging Van der Waals epitaxy
DOI10.1016/j.apsusc.2022.152774
Funding OrganizationNational Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China
WOS KeywordTHIN-FILM ; MORPHOLOGY
Language英语
Funding ProjectNational Natural Science Foundation of China[11904039] ; National Natural Science Foundation of China[52071041] ; Fundamental Research Funds for the Central Universities, China[2021CDJLXB006] ; Fundamental Research Funds for the Central Universities, China[2021CDJCGJ013]
Funding OrganizationNational Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities, China ; Fundamental Research Funds for the Central Universities, China
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000775599300002
PublisherELSEVIER
Citation statistics
Document Type期刊论文
Identifierhttp://ir.iggcas.ac.cn/handle/132A11/105086
Collection地球与行星物理院重点实验室
Corresponding AuthorZhang, Bin
Affiliation1.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
2.Chongqing Univ, Multiscale Porous Mat Ctr, Inst Adv Interdisciplinary Studies, Chongqing 400044, Peoples R China
3.Chongqing Univ, Sch Chem & Chem Engn, Chongqing 400044, Peoples R China
4.Chinese Acad Sci, Inst Geol & Geophys, Key Lab Earth & Planetary Phys, Beijing 100029, Peoples R China
5.Chinese Acad Sci, Inst Geol & Geophys, Elect Microscopy Lab, Beijing 100029, Peoples R China
6.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
7.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
8.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
9.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China
10.Chongqing Univ Technol, Coll Chem & Chem Engn, 69 Hongguang Rd, Chongqing 400054, Peoples R China
Recommended Citation
GB/T 7714
Liu, Jie,Li, Jingwei,Gu, Lixin,et al. Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure[J]. APPLIED SURFACE SCIENCE,2022,586:7.
APA Liu, Jie.,Li, Jingwei.,Gu, Lixin.,Wu, Hong.,Han, Guang.,...&Zhou, Xiaoyuan.(2022).Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure.APPLIED SURFACE SCIENCE,586,7.
MLA Liu, Jie,et al."Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure".APPLIED SURFACE SCIENCE 586(2022):7.
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